1N4150W vishay semiconductors formerly general semiconductor document number 88105 www.vishay.com 13-may-02 1 small-signal diode electrical characteristics (t j = 25? unless otherwise noted) parameter symbol test condition min typ max unit forward voltage drop v f i f = 200ma 1.05 v reverse current i r v r = 50v 100 na reverse recovery time t rr i f = i r = 10 to 200ma 4.0 ns to i rr = 0.1i f note: (1) valid provided that electrodes are kept at ambient temperature. .022 (0.55) .112 (2.85) .152 (3.85) .067 (1.70) .053 (1.35) max. .010 (0.25) min. cathode band .006 (0.15) max. to p v i ew .140 (3.55) .100 (2.55) .055 (1.40) .004 (0.1) max. sod-123 features silicon epitaxial planar diode for general purpose and switching this diode is also available in other case styles including the do-35 case with the type designation 1n4150, and the minimelf case with the type designation ll4150. dimensions in inches and (millimeters) maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol limit unit peak reverse voltage v rm 50 v maximum average rectified current i f(av) 200 ma maximum power dissipation at t amb = 25 cp tot 410 (1) mw maximum junction temperature t j 150 c storage temperature range t s 65 to +150 c mechanical data case: sod-123 plastic case weight: approx. 0.01g marking code: a4 packaging codes/options: d3/10k per 13 reel (8mm tape), 30k/box d4/3k per 7 reel (8mm tape), 30k/box 0.094 (2.40) 0.055 (1.40) 0.055 (1.40) mounting pad layout
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